fringing field effect
英 [ˈfrɪndʒɪŋ fiːld ɪˈfekt]
美 [ˈfrɪndʒɪŋ fiːld ɪˈfekt]
弥散场效应
双语例句
- In the past, the pull-in parameters of parallel plate MEMS devices with the fringing field effect are often estimated using finite element method ( FEM).
在过去的研究中，对漏电场不能忽略的平行平板式静电微执行器，通常只能采用有限元法数值求解。 - An analytical subthreshold surface potential model for the DMG SOI MOSFET with high k gate dielectrics, which accounts for the short channel effect and the fringing field effect, has been developed.
还研究了高k栅介质对DMGSOIMOSFET的影响，为高k栅介质DMGSOIMOSFET建立了表面势模型，模型中考虑了边缘电场效应和短沟道效应。 - And the model of the fringing field capacitances are set up. The relevant data of pull-in phenomenon are obtained in the case of taking into account the fringing field effect.
然后介绍了漏电场对微执行器pull-in参数的影响，建立相关的漏电场的模型，在考虑漏电场的情况下，得出了pull-in现象的相关数据。